AO4802, AO4802l symbol v ds v gs i dm t j , t stg symbol typ max 48 62.5 74 110 r jl 35 40 absolute maximum ratings t a =25c unless otherwise noted parameter maximum units drain-source voltage 30 v gate-source voltage 12 v a t a =70c 6 pulsed drain current b 40 continuous drain current a t a =25c i d 7 t a =70c 1.44 w power dissipation t a =25c p d 2 steady-state c/w junction and storage temperature range -55 to 150 c thermal characteristics maximum junction-to-lead c steady-state c/w parameter units maximum junction-to-ambient a t 10s r ja c/w maximum junction-to-ambient a features v ds (v) = 30v i d = 7a r ds(on) < 26m ? (v gs = 10v) r ds(on) < 30m ? (v gs = 4.5v) r ds(on) < 40m ? (v gs = 2.5v) r ds(on) < 70m ? (v gs = 1.8v) the AO4802 uses advanced trench technology to provide excellent r ds(on) and low gate charge. they offer operation over a wide gate drive range from 1.8v to 12v. the two devices may be used individually, in parallel or to form a bidirectional blocking switch. AO4802l ( green product ) is offered in a lead-free package. g1 s1 g2 s2 d1 d1 d2 d2 1 2 3 4 8 7 6 5 g1 d1 s1 g2 d2 s2 soic-8 dual n-channel enhancement mode field general description effect transistor www.freescale.net.cn 1 / 4
AO4802, AO4802l symbol min typ max units bv dss 30 v 1 t j =55c 5 i gss 100 na v gs(th) 0.6 0.8 1 v i d(on) 30 a 22 26 t j =125c 28 36 25 30 m ? 34 40 m ? 52 70 m ? g fs 12 17 s v sd 0.66 1 v i s 3a c iss 767 pf c oss 111 pf c rss 82 pf r g 1.3 ? q g 10 nc q gs 1.2 nc q gd 3.1 nc t d(on) 5ns t r 5.5 ns t d(off) 39 ns t f 4.7 ns t rr body diode reverse recovery time 15 ns q rr body diode reverse recovery charge 7.1 nc this product has been designed and qualified for the consumer market. applications or uses as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applications or uses of its products. aos reserves the right to improve product design, functions and reliability without notice. i f =5a, di/dt=100a/ s i f =5a, di/dt=100a/ s electrical characteristics (t j =25c unless otherwise noted) parameter conditions static parameters drain-source breakdown voltage i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =24v, v gs =0v a gate-body leakage current v ds =0v, v gs =12v gate threshold voltage v ds =v gs i d =250 a on state drain current v gs =4.5v, v ds =5v r ds(on) static drain-source on-resistance v gs =10v, i d =7a m ? v gs =4.5v, i d =6a v gs =2.5v, i d =4a v gs =1.8v, i d =2a v gs =0v, v ds =0v, f=1mhz forward transconductance v ds =5v, i d =5a diode forward voltage i s =1a maximum body-diode continuous current dynamic parameters input capacitance v gs =0v, v ds =15v, f=1mhz output capacitance reverse transfer capacitance turn-on rise time turn-off delaytime gate resistance turn-off fall time switching parameters total gate charge v gs =4.5v, v ds =15v, i d =7a gate source charge gate drain charge turn-on delaytime v gs =10v, v ds =15v, r l =2.2 ? , r gen =6 ? a: the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any a given application depends on the user's specific board design. the current rating is based on the t 10s thermal resistance rating. b: repetitive rating, pulse width limited by junction temperature. c. the r ja is the sum of the thermal impedence from junction to lead r jl and lead to ambient. d. the static characteristics in figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. e. these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the soa curve provides a single pulse rating. www.freescale.net.cn 2 / 4
AO4802, AO4802l typical electrical and thermal characteristics 0 5 10 15 20 25 012345 v ds (volts) fig 1: on-region characteristics i d (a) v gs =1.5v 2v 2.5v 4.5v 10v 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 v gs(volts) figure 2: transfer characteristics i d (a) 10 20 30 40 50 60 70 0 5 10 15 20 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd (volts) figure 6: body-diode characteristics i s (a) 25 c 125 c 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =2.5v v gs =10v v gs =4.5v 10 20 30 40 50 60 70 80 0246810 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c v ds =5v v gs =2.5v v gs =4.5v v gs =10 v i d =5a v gs =1.8v v gs =1.8v 25 c 125c www.freescale.net.cn 3 / 4
AO4802, AO4802l typical electrical and thermal characteristics 0 1 2 3 4 5 024681012 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0 200 400 600 800 1000 1200 1400 0 5 10 15 20 25 30 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance c oss c rss 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 s v ds =15v i d =7a single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =62.5c/w t o n t p d in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse t j(max) =150c t a =25c www.freescale.net.cn 4 / 4
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